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| NTE2515 (NPN) & NTE2516 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage D High Gain-Bandwidth Product D Excellent Linearity of hFE D Fast Switching Time Applications: D Display Drivers D High Speed Inverters D Converters Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Collector Power Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product NTE2515 NTE2516 Symbol ICBO IEBO hFE fT Test Conditions VCB = 100V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 500mA VCE = 5V, IC = 3A VCE = 10V, IC = 500mA Min - - 140 40 - - Typ - - - - 180 130 Max 1.0 1.0 240 - - - MHz MHz Unit A A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Output Capacitance NTE2515 NTE2516 Collector Emitter Saturation Voltage NTE2515 NTE2516 Base Emitter Saturation Voltage Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Turn-On Time Storage Time NTE2515 NTE2516 Fall Time tf VBE(sat) IC = 2A, IB = 200mA V(BR)CBO IC = 10A, IE = 0 V(BR)CEO IC = 1mA, RBE = V(BR)EBO IE = 10A, IC = 0 ton tstg VCC = 25V, VBE = -5V, 10IB1 = -10IB2 = IC = 2A, Pulse Width = 20s, Duty Cycle 1%, Note 1 VCE(sat) IC = 2A, IB = 200mA Symbol Cob Test Conditions VCB = 10V, f = 1MHz Min - - - - - 120 100 6 - - - - Typ 40 65 150 200 0.9 - - - 100 900 800 50 Max - - 400 500 1.2 - - - - - - - Unit pF pF mV mV V V V V ns ns ns ns Note 1. For NTE2514, the polarity is reversed. .315 (8.0) .106 (2.7) .433 (11.0) C E B .610 (15.5) .094 (2.4) |
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